| PART |
Description |
Maker |
| SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses & fastest Switching
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| IPI25N06S3L-22 IPB25N06S3L-22 IPP25N06S3L-22 SP000 |
OptiMOS?-T Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOST Power-Transistor
|
Infineon Technologies AG
|
| SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| CENU05 CENU06 CENU57 CENU07 CEN-U07 CENU55 CENU56 |
SILICON COMPLEMENTARY POWER TRANSISTORS 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| IPI12CNE8NG IPB12CNE8NG IPD12CNE8NG IPP12CNE8N IPP |
OptiMOS Power-Transistor 的OptiMOS功率晶体
OPTIMOS⑶2 POWER-TRANSISTOR
OptiMOS㈢2 Power-Transistor
OptiMOS?2 Power-Transistor
|
Infineon Technologies AG
|
| UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC Corp.
NEC[NEC]
|
| UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc.
NEC[NEC]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| IPB80N04S2-H4 IPI80N04S2-0H4 IPP80N04S2-H4 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
